IPA60R180C7XKSA1

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4 670 ֏
от 2 шт.4 100 ֏
от 5 шт.3 700 ֏
от 10 шт.3 510 ֏
1 шт. на сумму 4 670 ֏
Номенклатурный номер: 8007710384

Описание

Электроэлемент
Описание Н-Ч 600В 9А 29Вт 0,18Р ТО220-Фуллпак Характеристики
Категория Транзистор
Тип модуль
Вид IGBT

Технические параметры

Brand Infineon Technologies
Factory Pack Quantity 500
Height 16.15 mm
Length 10.65 mm
Manufacturer Infineon
Mounting Style Through Hole
Package / Case TO-220FP-3
Packaging Tube
Part # Aliases IPA60R180C7 SP001296216
Product Category MOSFET
RoHS Details
Series CoolMOS C7
Technology Si
Tradename CoolMOS
Unit Weight 0.211644 oz
Vds - Drain-Source Breakdown Voltage 600 V
Width 4.85 mm
Base Product Number IPA60R180 ->
Current - Continuous Drain (Id) @ 25В°C 9A (Tc)
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On, Min Rds On) 10V
ECCN EAR99
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 400V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tube
Power Dissipation (Max) 29W (Tc)
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package PG-TO220-FP
Vgs (Max) В±20V
Vgs(th) (Max) @ Id 4V @ 260ВµA
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 9 A
Maximum Drain Source Resistance 0.18 Ω
Maximum Drain Source Voltage 650 V
Maximum Gate Threshold Voltage 4V
Number of Elements per Chip 1
Package Type TO-220 FP
Pin Count 3
Transistor Material Silicon
Вес, г 0.1

Техническая документация

Datasheet IPA60R180C7XKSA1
pdf, 1165 КБ
Datasheet IPA60R180C7XKSA1
pdf, 1140 КБ