CSD17577Q3A

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1 280 ֏

от 2 шт. — 840 ֏

1 шт. на сумму 1 280 ֏

Номенклатурный номер: 8007766031

Электроэлемент

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.4 mOhm 8-VSONP -55 to 150

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	35
Maximum Drain Source Resistance - (mOhm)	4.8@10V
Maximum Drain Source Voltage - (V)	30
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	1.8
Maximum Power Dissipation - (mW)	2500
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	8
Process Technology	NexFET
Standard Package Name	SON
Supplier Package	VSONP EP
Typical Gate Charge @ 10V - (nC)	27
Typical Gate Charge @ Vgs - (nC)	13@4.5VI27@10V
Typical Input Capacitance @ Vds - (pF)	1780@15V
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	4 ns
Forward Transconductance - Min:	76 S
Id - Continuous Drain Current:	83 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	53 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	4.8 mOhms
Rise Time:	31 ns
Series:	CSD17577Q3A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	4 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Вес, г	0.17