BSC150N03LDG
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см. техническую документацию
см. техническую документацию
1 100 ֏
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от 5 шт. —
840 ֏
от 10 шт. —
740 ֏
от 12 шт. —
700 ֏
2 шт.
на сумму 2 200 ֏
Описание
Электроэлемент
MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 2 ns, 2 ns |
| Forward Transconductance - Min | 18 S, 18 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 20 A, 20 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC150N03LDGATMA1 BSC150N03LDGXT SP000359362 |
| Pd - Power Dissipation | 26 W |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Qg - Gate Charge | 13.2 nC, 13.2 nC |
| Rds On - Drain-Source Resistance | 12.5 mOhms, 12.5 mOms |
| Rise Time | 2.2 ns, 2.2 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 12 ns, 12 ns |
| Typical Turn-On Delay Time | 2.7 ns, 2.7 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V, 30 V |
| Vgs - Gate-Source Voltage | 20 V, 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 1 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 18 S |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | TDSON-8 |
| Part # Aliases: | BSC15N3LDGXT SP000359362 BSC150N03LDGATMA1 |
| Pd - Power Dissipation: | 26 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 13.2 nC |
| Rds On - Drain-Source Resistance: | 12.5 mOhms |
| Rise Time: | 2.2 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 2.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 318 КБ
