HIP2100EIBZ, Gate Drivers 100V H-BRDG DRVR 8LD EP

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1937 шт., срок 6-8 недель

5 500 ֏

от 10 шт. — 4 320 ֏

от 100 шт. — 3 390 ֏

от 250 шт. — 3 000 ֏

1 шт. на сумму 5 500 ֏

Номенклатурный номер: 8004744151

Power\Power Management ICs\Gate Drivers

Driver 2A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SOIC N EP Tube

Brand:	Renesas/Intersil
Factory Pack Quantity: Factory Pack Quantity:	980
Fall Time:	500 ns
Features:	Independent
Manufacturer:	Renesas Electronics
Maximum Operating Temperature:	+125 C
Maximum Turn-Off Delay Time:	8 ns
Maximum Turn-On Delay Time:	8 ns
Minimum Operating Temperature:	-40 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Operating Supply Current:	2.5 mA
Output Current:	2 A
Package / Case:	SOIC-EP-Narrow-8
Packaging:	Tube
Pd - Power Dissipation:	3.1 W
Product Category:	Gate Drivers
Product Type:	Gate Drivers
Product:	Half-Bridge Drivers
Propagation Delay - Max:	35 ns
Rise Time:	500 ns
Series:	HIP2100
Subcategory:	PMIC-Power Management ICs
Supply Voltage - Max:	14 V
Supply Voltage - Min:	9 V
Technology:	Si
Type:	High-Side, Low-Side
Driver Configuration	Non-Inverting
Driver Type	High and Low Side
Fall Time	10 ns
Input Logic Level	CMOS
Mounting	Surface Mount
Number of Drivers	2
Operating Supply Voltage (Max)	14 V
Operating Supply Voltage (Min)	9 V
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Output Resistance	3 ohm
Package Type	SOIC N EP
Packaging	Rail/Tube
Peak Output Current	2000
Pin Count	8
Power Dissipation	3.1 W
Propagation Delay Time	35 ns
Rad Hardened	No
Rise Time	10 ns
Turn Off Delay Time	8 ms
Turn On Delay Time (Max)	8 us
Вес, г	0.08