CSD19538Q2
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см. техническую документацию
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710 ֏
от 10 шт. —
620 ֏
от 100 шт. —
374 ֏
от 500 шт. —
281 ֏
1 шт.
на сумму 710 ֏
Описание
POWER FIELD-EFFECT TRANSISTOR, 4.6A I(D), 100V, 0.072OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 2 ns |
Forward Transconductance - Min: | 19 S |
Id - Continuous Drain Current: | 14.4 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | WSON-FET-6 |
Pd - Power Dissipation: | 20.2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 5.6 nC |
Rds On - Drain-Source Resistance: | 59 mOhms |
Rise Time: | 3 ns |
Series: | CSD19538Q2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 7 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 2 ns |
Forward Transconductance - Min | 19 S |
Height | 0.75 mm |
Id - Continuous Drain Current | 50 A |
Length | 2 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | WSON-FET-6 |
Packaging | Cut Tape |
Pd - Power Dissipation | 20.2 W |
Product Category | MOSFET |
Qg - Gate Charge | 5.6 nC |
Rds On - Drain-Source Resistance | 59 mOhm |
Rise Time | 3 ns |
RoHS | Details |
Series | CSD19538Q2 |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 7 ns |
Typical Turn-On Delay Time | 5 ns |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.8 V |
Width | 2 mm |
Вес, г | 0.02 |
Техническая документация
Datasheet CSD19538Q2T
pdf, 427 КБ