IRFP254PBF, Транзистор полевой MOSFET N-канальный 250В 23A TO-247AC

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660 ֏

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от 7 шт. — 620 ֏

от 13 шт. — 540 ֏

от 25 шт. — 520 ֏

4 шт. на сумму 2 640 ֏

Номенклатурный номер: 8007966234

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы

Транзистор полевой MOSFET N-канальный 250В 23A TO-247AC

Корпус	TO-247AC
Base Product Number	IRFP254 ->
Current - Continuous Drain (Id) @ 25В°C	23A (Tc)
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	190W (Tc)
Rds On (Max) @ Id, Vgs	140mOhm @ 14A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
FET Feature	-
Manufacturer	Vishay Siliconix
Packaging	Tube
Part Status	Active
Series	-
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Resistance	140 mΩ
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	190 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-247AC
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	140 nC @ 10 V
Width	5.31mm
Вес, г	6