BSC190N12NS3G
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см. техническую документацию
см. техническую документацию
4 270 ֏
от 2 шт. —
3 780 ֏
от 4 шт. —
3 460 ֏
Добавить в корзину 1 шт.
на сумму 4 270 ֏
Описание
Электроэлемент
120V 8.6A 19mOhm@10V,39A 69W 4V@42uA N Channel TDSON-8(6x5) MOSFETs ROHS
Технические параметры
Brand | Infineon Technologies |
Configuration | Single |
Factory Pack Quantity | 5000 |
Fall Time | 4 ns |
Forward Transconductance - Min | 45 S, 23 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 44 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Reel |
Part # Aliases | BSC190N12NS3GATMA1 BSC190N12NS3GXT SP000652752 |
Pd - Power Dissipation | 69 W |
Product Category | MOSFET |
Qg - Gate Charge | 26 nC |
Rds On - Drain-Source Resistance | 19 mOhms |
Rise Time | 16 ns |
RoHS | Details |
Series | OptiMOS 3 |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | OptiMOS 3 Power-Transistor |
Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 17 ns |
Vds - Drain-Source Breakdown Voltage | 120 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Width | 5.15 mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 5000 |
Fall Time: | 4 ns |
Forward Transconductance - Min: | 45 S, 23 S |
Id - Continuous Drain Current: | 44 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TDSON-8 |
Part # Aliases: | SP000652752 BSC19N12NS3GXT BSC190N12NS3GATMA1 |
Pd - Power Dissipation: | 69 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 26 nC |
Rds On - Drain-Source Resistance: | 19 mOhms |
Rise Time: | 16 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | OptiMOS 3 Power-Transistor |
Typical Turn-Off Delay Time: | 22 ns |
Typical Turn-On Delay Time: | 17 ns |
Vds - Drain-Source Breakdown Voltage: | 120 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.38 |
Техническая документация
Datasheet
pdf, 653 КБ