BSH105.215
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76 ֏
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Альтернативные предложения3
Описание
Транзисторы и сборки MOSFET
Описание Транзистор N-MOSFET, полевой, 20В, 670мА, 417мВт, SOT23 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Корпус | to236 | |
кол-во в упаковке | 3000 | |
Base Product Number | BSH105 -> | |
Current - Continuous Drain (Id) @ 25В°C | 1.05A (Ta) | |
Drain to Source Voltage (Vdss) | 20V | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
ECCN | EAR99 | |
FET Type | N-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 4.5V | |
HTSUS | 8541.21.0095 | |
Input Capacitance (Ciss) (Max) @ Vds | 152pF @ 16V | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Type | Surface Mount | |
Operating Temperature | -55В°C ~ 150В°C (TJ) | |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Power Dissipation (Max) | 417mW (Ta) | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 600mA, 4.5V | |
REACH Status | REACH Unaffected | |
RoHS Status | ROHS3 Compliant | |
Supplier Device Package | TO-236AB | |
Technology | MOSFET (Metal Oxide) | |
Vgs (Max) | В±8V | |
Vgs(th) (Max) @ Id | 570mV @ 1mA | |
Continuous Drain Current (Id) @ 25В°C | 1.05A | |
Power Dissipation-Max (Ta=25В°C) | 417mW | |
Rds On - Drain-Source Resistance | 200mО© @ 600mA,4.5V | |
Transistor Polarity | N Channel | |
Vds - Drain-Source Breakdown Voltage | 20V | |
Vgs - Gate-Source Voltage | 570mV @ 1mA | |
Channel Mode | Enhancement | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.05 A | |
Maximum Drain Source Resistance | 200 mΩ | |
Maximum Drain Source Voltage | 20 V | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Maximum Gate Threshold Voltage | 0.85V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 417 mW | |
Minimum Gate Threshold Voltage | 0.4V | |
Minimum Operating Temperature | -55 °C | |
Number of Elements per Chip | 1 | |
Package Type | SOT-23 | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 3.9 nC @ 4.5 V | |
Width | 1.4mm | |
Вес, г | 0.043 |