IKW50N120CS7XKSA1, IGBT Transistors INDUSTRY 14
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
TRENCHSTOP™ IGBT7 Discretes & ModulesInfineon Technologies TRENCHSTOP™ IGBT7 Discretes and Modules are designed for variable speed drives. 20% of energy or 17 million tons of CO 2 could be saved if only half of all industrial drives had electric speed control. Infineon facilitates this switch with the TRENCHSTOP IGBT7 technology.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.65 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 82 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IKW50N120CS7 SP005419710 |
| Pd - Power Dissipation: | 428 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | TRENCHSTOP IGBT7 S7 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1958 КБ
