IKW08N120CS7XKSA1, IGBT Transistors INDUSTRY 14
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
The Infineon's 8 A TRENCHSTOP IGBT7 S7 discrete comes in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contributing to overall low total losses.
Технические параметры
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 8 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 106 W |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-247-3 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 1 |
Техническая документация
Datasheet IKW08N120CS7XKSA1
pdf, 1725 КБ
