CSD87501LT, MOSFET 30V Dual N-Ch Common Drain NexFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Mosfet Array 2, N-канал (двойной), общий сток, 2,5 Вт, поверхностный монтаж 10-Picostar (3,37x1,47)
Технические параметры
| Base Product Number | CSD87501 -> |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| HTSUS | 8541.29.0095 |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 10-XFLGA |
| Power - Max | 2.5W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 10-Picostar (3.37x1.47) |
| Vgs(th) (Max) @ Id | 2.3V @ 250ВµA |
| Configuration | Common Drain |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.3V@250uA |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 40nC@10V |
| Type | 2 N-Channel |
| Вес, г | 0.4 |
