CSD25480F3, MOSFETs -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
580 ֏
от 10 шт. —
383 ֏
от 100 шт. —
150 ֏
от 1000 шт. —
103 ֏
1 шт.
на сумму 580 ֏
Описание
Unclassified
MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 8 S |
| Height | 0.35 mm |
| Id - Continuous Drain Current | -1.7 A |
| Length | 0.73 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | Picostar-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product Category | MOSFET |
| Qg - Gate Charge | 0.7 nC |
| Rds On - Drain-Source Resistance | 840 mOhm |
| Rise Time | 5 ns |
| RoHS | Details |
| Series | CSD25480F3 |
| Technology | Si |
| Tradename | PicoStar |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 9 ns |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs - Gate-Source Voltage | -12 V |
| Vgs th - Gate-Source Threshold Voltage | -950 mV |
| Width | 0.64 mm |
| Continuous Drain Current (Id) | 1.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 132mΩ@400mA, 8V |
| Drain Source Voltage (Vdss) | 20V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V@250uA |
| Input Capacitance (Ciss@Vds) | 155pF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 500mW |
| Total Gate Charge (Qg@Vgs) | 910pC@10V |
| Type | 1PCSPChannel |
| Вес, кг | 14.2 |
Техническая документация
Документация
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