BSC047N08NS3G
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см. техническую документацию
см. техническую документацию
2 510 ֏
от 2 шт. —
2 070 ֏
от 5 шт. —
1 740 ֏
от 10 шт. —
1 620 ֏
1 шт.
на сумму 2 510 ֏
Описание
Электроэлемент
MOSFET, N CH, 100A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:125W; Transistor Case Style:PG-TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:100A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 11 ns |
| Forward Transconductance - Min | 60 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Cut Tape |
| Part # Aliases | BSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372 |
| Pd - Power Dissipation | 125 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 69 nC |
| Rds On - Drain-Source Resistance | 3.9 mOhms |
| Rise Time | 17 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 44 ns |
| Typical Turn-On Delay Time | 18 ns |
| Unit Weight | 0.006349 oz |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 60 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | SP000436372 BSC47N8NS3GXT BSC047N08NS3GATMA1 |
| Pd - Power Dissipation: | 125 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 69 nC |
| Rds On - Drain-Source Resistance: | 3.9 mOhms |
| Rise Time: | 17 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 44 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.389 |
Техническая документация
Datasheet
pdf, 1842 КБ
