IRF720PBF, Транзистор N-MOSFET, полевой, 400В, 2,1А, 50Вт, TO220AB
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Описание
Описание Транзистор N-MOSFET, полевой, 400В, 2,1А, 50Вт, TO220AB
Технические параметры
| Id - непрерывный ток утечки | 3.3 A |
| Pd - рассеивание мощности | 50 W |
| Qg - заряд затвора | 20 nC |
| Rds Вкл - сопротивление сток-исток | 1.8 Ohms |
| Vds - напряжение пробоя сток-исток | 400 V |
| Vgs - напряжение затвор-исток | 10 V |
| Vgs th - пороговое напряжение затвор-исток | 2 V |
| Вид монтажа | Through Hole |
| Время нарастания | 14 ns |
| Время спада | 13 ns |
| Канальный режим | Enhancement |
| Категория продукта | МОП-транзистор |
| Количество каналов | 1 Channel |
| Конфигурация | Single |
| Крутизна характеристики прямой передачи - Мин. | 1.7 S |
| Максимальная рабочая температура | + 150 C |
| Минимальная рабочая температура | 55 C |
| Подкатегория | MOSFETs |
| Полярность транзистора | N-Channel |
| Размер фабричной упаковки | 50 |
| Серия | IRF |
| Технология | Si |
| Тип продукта | MOSFET |
| Тип транзистора | 1 N-Channel |
| Типичное время задержки выключения | 30 ns |
| Типичное время задержки при включении | 10 ns |
| Торговая марка | Vishay / Siliconix |
| Упаковка | Tube |
| Упаковка / блок | TO-220AB-3 |
| Base Product Number | IRF720 -> |
| Current - Continuous Drain (Id) @ 25В°C | 3.3A (Tc) |
| Drain to Source Voltage (Vdss) | 400V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 3.3 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Maximum Drain Source Resistance (mOhm) | 1800 10V |
| Maximum Drain Source Voltage (V) | 400 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 50000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 13 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ 10V (nC) | 20(Max) |
| Typical Gate Charge @ Vgs (nC) | 20(Max)10V |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Gate to Drain Charge (nC) | 11(Max) |
| Typical Gate to Source Charge (nC) | 3.3(Max) |
| Typical Input Capacitance @ Vds (pF) | 410 25V |
| Typical Output Capacitance (pF) | 120 |
| Typical Reverse Recovery Charge (nC) | 1400 |
| Typical Reverse Recovery Time (ns) | 270 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 47 25V |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Typical Turn-On Delay Time (ns) | 10 |
| FET Feature | - |
| Manufacturer | Vishay Siliconix |
| Packaging | Tube |
| Series | - |
| Maximum Continuous Drain Current | 3.3 A |
| Maximum Drain Source Resistance | 1.8 Ω |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220AB |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Width | 4.7mm |
| Вес, г | 1.99 |
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