IRFU420PBF, Транзистор N-MOSFET, полевой, 500В, 1,5А, 42Вт, IPAK
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Описание
Описание Транзистор N-MOSFET, полевой, 500В, 1,5А, 42Вт, IPAK
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 2.4 A |
Maximum Drain Source Resistance | 3 Ω |
Maximum Drain Source Voltage | 500 V |
Maximum Gate Source Voltage | ±20 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.5 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | IPAK(TO-251) |
Pin Count | 3 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 19(Maximumn)nC |
Width | 6.22mm |
Brand | Vishay Semiconductors |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 16 ns |
Height | 6.22 mm |
Id - Continuous Drain Current | 2.4 A |
Length | 6.73 mm |
Manufacturer | Vishay |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-251-3 |
Packaging | Tube |
Pd - Power Dissipation | 2.5 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 3 Ohms |
Rise Time | 8.6 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 33 ns |
Typical Turn-On Delay Time | 8 ns |
Unit Weight | 0.01164 oz |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 20 V |
Вес, г | 0.658 |