SQM110P06-8M9L_GE3
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см. техническую документацию
см. техническую документацию
3 880 ֏
от 2 шт. —
3 350 ֏
от 5 шт. —
3 000 ֏
от 10 шт. —
2 820 ֏
1 шт.
на сумму 3 880 ֏
Описание
Электроэлемент
Mosfet, P-Ch, 60V, 110A, 175Deg C, 230W Rohs Compliant: Yes |Vishay SQM110P06-8M9L_GE3
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 48 ns |
| Id - Continuous Drain Current: | 110 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 230 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 200 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 7.1 mOhms |
| Rise Time: | 15 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 71 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 1.764 |
Техническая документация
Datasheet
pdf, 170 КБ
Документация
pdf, 169 КБ
