CSD25485F5T, MOSFETs -20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection 3-PICOSTAR -55 to 150

1 240 ֏
от 10 шт.970 ֏
от 100 шт.432 ֏
от 250 шт.417 ֏
1 шт. на сумму 1 240 ֏
Номенклатурный номер: 8008531487
Бренд: Texas Instruments

Описание

Unclassified
P-канал 20 В, 5,3 А (Ta) 1,4 Вт (Ta), поверхностный монтаж 3-PICOSTAR

Технические параметры

Base Product Number CSD25485 ->
Current - Continuous Drain (Id) @ 25В°C 5.3A (Ta)
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V
ECCN EAR99
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4.5V
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 533pF @ 10V
Manufacturer Product Page http://www.ti.com/general/docs/suppproductinfo.tsp
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case 3-SMD, No Lead
Power Dissipation (Max) 1.4W (Ta)
Rds On (Max) @ Id, Vgs 35mOhm @ 900mA, 8V
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Series FemtoFETв„ў ->
Supplier Device Package 3-PICOSTAR
Technology MOSFET (Metal Oxide)
Vgs (Max) -12V
Vgs(th) (Max) @ Id 1.3V @ 250ВµA
Вес, г 1