SI4463BDY-T1-E3
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Описание
МОП-транзистор 20V 13.7A 0.011Ohm
Технические параметры
| Вид монтажа | SMD/SMT |
| Высота | 1.75 mm |
| Длина | 4.9 mm |
| Другие названия товара № | SI4463BDY-E3 |
| Категория продукта | МОП-транзистор |
| Коммерческое обозначение | TrenchFET |
| Подкатегория | MOSFETs |
| Размер фабричной упаковки | 2500 |
| Серия | SI4 |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Упаковка / блок | SO-8 |
| Ширина | 3.9 mm |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 9.8 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13.7 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 11 10V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 84 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Power Dissipation (mW) | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOP |
| Supplier Package | SOIC N |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Fall Time (ns) | 75 |
| Typical Gate Charge @ Vgs (nC) | 37 4.5V |
| Typical Gate Plateau Voltage (V) | 2.1 |
| Typical Gate to Drain Charge (nC) | 11 |
| Typical Gate to Source Charge (nC) | 8.7 |
| Typical Output Capacitance (pF) | 800 |
| Typical Reverse Recovery Time (ns) | 50 |
| Typical Rise Time (ns) | 60 |
| Typical Turn-Off Delay Time (ns) | 115 |
| Typical Turn-On Delay Time (ns) | 35 |
Техническая документация
Datasheet SI4463BDY-T1-E3
pdf, 164 КБ
Datasheet SI4463BDY-T1-E3
pdf, 165 КБ
