ZXTN2010ZTA, Биполярный транзистор NPN 60В 5A SOT89

Изображения служат только для ознакомления,
см. техническую документацию

146 ֏

Мин. кол-во для заказа 14 шт.

от 297 шт. — 119 ֏

от 594 шт. — 106 ֏

14 шт. на сумму 2 044 ֏

Номенклатурный номер: 8008697251

Бренд: DIODES INC.

Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы

Биполярный транзистор NPN 60В 5A SOT89

Корпус	SOT-89-3
Collector-Emitter Breakdown Voltage	60V
Maximum DC Collector Current	5A
Pd - Power Dissipation	2.1W
Transistor Type	NPN
Maximum Collector Base Voltage	150 V
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	7 V
Maximum Operating Frequency	130 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.1 W
Minimum DC Current Gain	100
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-89
Pin Count	3
Transistor Configuration	Single
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	150 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	230 mV
Configuration:	Single
Continuous Collector Current:	5 A
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	130 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	2.1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTN2010
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.152