IRFR9110TRPBF, Транзистор полевой MOSFET P-канальный 100В 3.1A
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET P-канальный 100В 3.1A
Технические параметры
| Корпус | DPAK/TO-252AA | |
| Base Product Number | IRFR9110 -> | |
| Current - Continuous Drain (Id) @ 25В°C | 3.1A (Tc) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| ECCN | EAR99 | |
| FET Type | P-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V | |
| HTSUS | 8541.29.0095 | |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.9A, 10V | |
| RoHS Status | ROHS3 Compliant | |
| Supplier Device Package | D-Pak | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | В±20V | |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | P | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Maximum Continuous Drain Current (A) | 3.1 | |
| Maximum Drain Source Resistance (mOhm) | 1200 10V | |
| Maximum Drain Source Voltage (V) | 100 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Maximum IDSS (uA) | 100 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 2500 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 2 | |
| Pin Count | 3 | |
| PPAP | No | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-252 | |
| Supplier Package | DPAK | |
| Tab | Tab | |
| Typical Fall Time (ns) | 17 | |
| Typical Gate Charge @ 10V (nC) | 8.7(Max) | |
| Typical Gate Charge @ Vgs (nC) | 8.7(Max)10V | |
| Typical Input Capacitance @ Vds (pF) | 200 25V | |
| Typical Rise Time (ns) | 27 | |
| Typical Turn-Off Delay Time (ns) | 15 | |
| Typical Turn-On Delay Time (ns) | 10 | |
| Brand: | Vishay Semiconductors | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 | |
| Id - Continuous Drain Current: | 3.1 A | |
| Manufacturer: | Vishay | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-252-3 | |
| Pd - Power Dissipation: | 25 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 8.7 nC | |
| Rds On - Drain-Source Resistance: | 1.2 Ohms | |
| Series: | IRFR/U | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | P-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 4 V | |
| Вес, г | 0.52 |
