IRF135B203
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см. техническую документацию
см. техническую документацию
3 610 ֏
от 2 шт. —
3 080 ֏
от 5 шт. —
2 720 ֏
от 10 шт. —
2 620 ֏
1 шт.
на сумму 3 610 ֏
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 135В, 91А, 441Вт, TO220AB Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | Infineon/IR |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 81 ns |
| Forward Transconductance - Min | 200 S |
| Height | 15.65 mm |
| Id - Continuous Drain Current | 129 A |
| Length | 10 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 441 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 180 nC |
| Rds On - Drain-Source Resistance | 8.4 mOhms |
| Rise Time | 73 ns |
| RoHS | Details |
| Technology | Si |
| Tradename | StrongIRFET |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 114 ns |
| Typical Turn-On Delay Time | 18 ns |
| Vds - Drain-Source Breakdown Voltage | 135 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 4.4 mm |
| Continuous Drain Current (Id) | 129A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.4mΩ@77A, 10V |
| Drain Source Voltage (Vdss) | 135V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 9.7nF@50V |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 441W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 270nC@10V |
| Type | null |
| Case | TO220AB |
| Drain current | 91A |
| Drain-source voltage | 135V |
| Gate charge | 0.27µC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | THT |
| On-state resistance | 8.4mΩ |
| Polarisation | unipolar |
| Power dissipation | 441W |
| Pulsed drain current | 512A |
| Type of transistor | N-MOSFET |
| Вес, г | 2.734 |
