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TPW1R104PB,L1XHQ, MOSFET 132W 1MHz Automotive; AEC-Q101

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558 шт., срок 6-9 недель

2 720 ֏

Добавить в корзину 1 шт. на сумму 2 720 ֏

Номенклатурный номер: 8009090303

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	23 ns
Id - Continuous Drain Current:	120 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DSOP-Advance-8
Packaging:	Reel, Cut Tape
Part # Aliases:	TPW1R104PB, L1XHQ(O
Pd - Power Dissipation:	132 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	55 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	1.14 mOhms
Rise Time:	8 ns
Series:	UMOS IX
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	71 ns
Typical Turn-On Delay Time:	22 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.09