SQJ431EP-T1_GE3
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Описание
Электроэлемент
MOSFET, AEC-Q101, P-CH, -200V, -12A, Transistor Polarity:P Channel, Continuous Drain Current Id:-12A, Drain Source Voltage Vds:-200V, On Resistance Rds(on):0.178ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 12A(Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4355pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | PowerPAKВ® SO-8 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 83W(Tc) |
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250ВµA |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 12 |
| Maximum Drain Source Resistance (mOhm) | 213@10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 83000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| PCB changed | 4 |
| Pin Count | 5 |
| PPAP | Unknown |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Supplier Temperature Grade | Automotive |
| Tab | Tab |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ 10V (nC) | 71 |
| Typical Gate Charge @ Vgs (nC) | 71@10V |
| Typical Input Capacitance @ Vds (pF) | 3483@25V |
| Typical Rise Time (ns) | 11 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Typical Turn-On Delay Time (ns) | 15 |
| Вес, г | 0.156 |
Техническая документация
Datasheet
pdf, 736 КБ
Документация
pdf, 727 КБ
