IAUC100N04S6N022ATMA1

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1 760 ֏
от 2 шт.1 320 ֏
от 5 шт.1 040 ֏
от 10 шт.930 ֏
1 шт. на сумму 1 760 ֏
Номенклатурный номер: 8009249327

Описание

Электроэлемент
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R

Технические параметры

Channel Mode Enhancement
Continuous Drain Current 100(A)
Drain-Source On-Volt 40(V)
Gate-Source Voltage (Max) '±20(V)
Mounting Surface Mount
Number of Elements 1
Operating Temp Range -55C to 175C
Operating Temperature Classification Military
Package Type TDSON EP
Packaging Tape and Reel
Pin Count 8
Polarity N
Power Dissipation 75(W)
Rad Hardened No
Type Power MOSFET
Brand: Infineon Technologies
Channel Mode: Enhancement
Factory Pack Quantity: Factory Pack Quantity: 5000
Fall Time: 6 ns
Id - Continuous Drain Current: 100 A
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: TSDSON-8
Packaging: Reel, Cut Tape
Part # Aliases: IAUC100N04S6N022 SP001790496
Pd - Power Dissipation: 75 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 29 nC
Rds On - Drain-Source Resistance: 2.11 mOhms
Rise Time: 3 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 5 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
Channel Type N
Maximum Continuous Drain Current 100 A
Maximum Drain Source Voltage 40 V
Mounting Type Surface Mount
Вес, г 0.2092

Техническая документация

Datasheet
pdf, 595 КБ