IAUC100N04S6N022ATMA1
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от 5 шт. —
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от 10 шт. —
930 ֏
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Описание
Электроэлемент
Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R
Технические параметры
Channel Mode | Enhancement |
Continuous Drain Current | 100(A) |
Drain-Source On-Volt | 40(V) |
Gate-Source Voltage (Max) | '±20(V) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 175C |
Operating Temperature Classification | Military |
Package Type | TDSON EP |
Packaging | Tape and Reel |
Pin Count | 8 |
Polarity | N |
Power Dissipation | 75(W) |
Rad Hardened | No |
Type | Power MOSFET |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 6 ns |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TSDSON-8 |
Packaging: | Reel, Cut Tape |
Part # Aliases: | IAUC100N04S6N022 SP001790496 |
Pd - Power Dissipation: | 75 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 29 nC |
Rds On - Drain-Source Resistance: | 2.11 mOhms |
Rise Time: | 3 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 11 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
Channel Type | N |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 40 V |
Mounting Type | Surface Mount |
Вес, г | 0.2092 |
Техническая документация
Datasheet
pdf, 595 КБ
Datasheet IAUC100N04S6N022ATMA1
pdf, 666 КБ