SQJQ466E-T1_GE3
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см. техническую документацию
см. техническую документацию
3 870 ֏
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3 290 ֏
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3 080 ֏
от 10 шт. —
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Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 60V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:PowerPAK; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 200A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10210pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 150W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 10A, 10V |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| Supplier Device Package | PowerPAKВ® 8x8 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250ВµA |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-8x8-4 |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 135 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.9 mOhms |
| Rise Time: | 8 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 47 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.3722 |
Техническая документация
Документация
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