IRFR9010TRPBF, Транзистор полевой MOSFET P-канальный 50В 5.3A
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET P-канальный 50В 5.3A
Технические параметры
Корпус | DPAK/TO-252AA | |
Base Product Number | IRFR9010 -> | |
Current - Continuous Drain (Id) @ 25В°C | 5.3A (Tc) | |
Drain to Source Voltage (Vdss) | 50V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
ECCN | EAR99 | |
FET Type | P-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 10V | |
HTSUS | 8541.29.0095 | |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Type | Surface Mount | |
Operating Temperature | -55В°C ~ 150В°C (TJ) | |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Power Dissipation (Max) | 25W (Tc) | |
Rds On (Max) @ Id, Vgs | 500mOhm @ 2.8A, 10V | |
RoHS Status | ROHS3 Compliant | |
Supplier Device Package | D-Pak | |
Technology | MOSFET (Metal Oxide) | |
Vgs (Max) | В±20V | |
Vgs(th) (Max) @ Id | 4V @ 250ВµA | |
Automotive | No | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Single | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant with Exemption | |
Maximum Continuous Drain Current (A) | 5.3 | |
Maximum Drain Source Resistance (mOhm) | 500 10V | |
Maximum Drain Source Voltage (V) | 50 | |
Maximum Gate Source Leakage Current (nA) | 500 | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Gate Threshold Voltage (V) | 4 | |
Maximum IDSS (uA) | 250 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 25000 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Surface Mount | |
Number of Elements per Chip | 1 | |
Packaging | Tape and Reel | |
Part Status | Active | |
PCB changed | 2 | |
Pin Count | 3 | |
PPAP | No | |
Product Category | Power MOSFET | |
Standard Package Name | TO-252 | |
Supplier Package | DPAK | |
Tab | Tab | |
Typical Fall Time (ns) | 35 | |
Typical Gate Charge @ 10V (nC) | 6.1 | |
Typical Gate Charge @ Vgs (nC) | 6.1 10V | |
Typical Gate to Drain Charge (nC) | 3.9 | |
Typical Gate to Source Charge (nC) | 2 | |
Typical Input Capacitance @ Vds (pF) | 240 25V | |
Typical Output Capacitance (pF) | 160 | |
Typical Reverse Recovery Charge (nC) | 220 | |
Typical Rise Time (ns) | 47 | |
Typical Turn-Off Delay Time (ns) | 13 | |
Typical Turn-On Delay Time (ns) | 6.1 | |
Maximum Continuous Drain Current | 5.3 A | |
Maximum Drain Source Voltage | 50 V | |
Package Type | DPAK(TO-252) | |
Вес, г | 0.62 |