BSC500N20NS3GATMA1
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Описание
Электроэлемент
Transistor, MOSFET, N-channel normal level, 200V, 24A, 50mOhm, TDSON8 | Infineon BSC500N20NS3GATMA1
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Lead Finish | Tin |
| Maximum Continuous Drain Current | 24 A |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 50 mOhm |
| Typical Fall Time | 7 ns |
| Typical Rise Time | 5 ns |
| Typical Turn-Off Delay Time | 28 ns |
| Typical Turn-On Delay Time | 14 ns |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 19 S |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TDSON-8 |
| Part # Aliases: | BSC500N20NS3 G SP000998292 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 28 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Forward Diode Voltage | 1.2V |
| Maximum Drain Source Resistance | 50 mΩ |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 96 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Series | OptiMOS™ 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Width | 6.35mm |
| Continuous Drain Current (Id) | 24A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@22A, 10V |
| Drain Source Voltage (Vdss) | 200V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@60uA |
| Input Capacitance (Ciss@Vds) | 1.58nF@100V |
| Power Dissipation (Pd) | 96W |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Type | 1PCSNChannel |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1200 КБ
Datasheet BSC500N20NS3GATMA1
pdf, 574 КБ
Трёхмерное изображение изделия
zip, 307 КБ
Трёхмерное изображение изделия
zip, 205 КБ
