IMW65R027M1HXKSA1
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см. техническую документацию
см. техническую документацию
20 600 ֏
от 2 шт. —
19 600 ֏
от 5 шт. —
18 800 ֏
от 10 шт. —
17 900 ֏
1 шт.
на сумму 20 600 ֏
Описание
Электроэлемент
Transistor Silicon Carbide MOSFET N-CH 650V 47A 3-Pin TO-247 Tube - Rail/Tube (Alt: IMW65R027M1HXKSA1)
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 47(A) |
| Drain-Source On-Volt | 650(V) |
| Gate-Source Voltage (Max) | 18(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | TO-247 |
| Packaging | Rail/Tube |
| Pin Count | 3+Tab |
| Polarity | N |
| Power Dissipation | 189(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Base Product Number | IMW65R027 -> |
| Current - Continuous Drain (Id) @ 25В°C | 47A (Tc) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Tube |
| RoHS Status | ROHS3 Compliant |
| Channel Type | N |
| Maximum Continuous Drain Current | 47 A |
| Maximum Drain Source Resistance | 0.034 Ω |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Threshold Voltage | 5.7V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Series | CoolSiC |
| Transistor Material | Silicon |
| Вес, г | 1 |
Техническая документация
Datasheet IMW65R027M1HXKSA1
pdf, 1459 КБ
