IPD25N06S4L30ATMA2
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см. техническую документацию
см. техническую документацию
970 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
710 ֏
от 10 шт. —
600 ֏
от 100 шт. —
510 ֏
2 шт.
на сумму 1 940 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
Технические параметры
| Brand | Infineon Technologies |
| Factory Pack Quantity | 2500 |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Manufacturer | Infineon |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Part # Aliases | IPD25N06S4L-30 IPD25N06S4L30XT SP001028636 |
| Product Category | MOSFET |
| RoHS | Details |
| Series | IPD25N06 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Unit Weight | 0.139332 oz |
| Width | 6.22 mm |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 25 |
| Maximum Drain Source Resistance (mOhm) | 30 10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 29000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | Unknown |
| Process Technology | OptiMOS |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Supplier Temperature Grade | Automotive |
| Tab | Tab |
| Typical Fall Time (ns) | 2 |
| Typical Gate Charge @ 10V (nC) | 12.5 |
| Typical Gate Charge @ Vgs (nC) | 12.5 10V |
| Typical Input Capacitance @ Vds (pF) | 935 25V |
| Typical Rise Time (ns) | 1 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Resistance | 0.3 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Threshold Voltage | 2.2V |
| Mounting Type | Surface Mount |
| Package Type | DPAK(TO-252) |
| Transistor Material | Si |
| Вес, г | 0.426 |
Техническая документация
Datasheet
pdf, 244 КБ
Datasheet IPD25N06S4L30ATMA2
pdf, 234 КБ
