P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220PBF
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор P-МОП, полевой, 200В 3,6A 42Вт 1,5Ом TO252AA
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Resistance | 1.5 Ω |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Width | 6.22mm |
| Id - непрерывный ток утечки | 3.6 A |
| Pd - рассеивание мощности | 42 W |
| Qg - заряд затвора | 20 nC |
| Rds Вкл - сопротивление сток-исток | 1.5 Ohms |
| Vds - напряжение пробоя сток-исток | 200 V |
| Vgs - напряжение затвор-исток | 20 V, + 20 V |
| Vgs th - пороговое напряжение затвор-исток | 4 V |
| Вид монтажа | SMD/SMT |
| Канальный режим | Enhancement |
| Категория продукта | МОП-транзистор |
| Количество каналов | 1 Channel |
| Конфигурация | Single |
| Максимальная рабочая температура | + 150 C |
| Минимальная рабочая температура | 55 C |
| Подкатегория | MOSFETs |
| Полярность транзистора | P-Channel |
| Размер фабричной упаковки | 3000 |
| Серия | IRFR/U |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay Semiconductors |
| Упаковка | Tube |
| Упаковка / блок | TO-252-3 |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 3.6 |
| Maximum Drain Source Resistance (mOhm) | 1500 10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 19 |
| Typical Gate Charge @ 10V (nC) | 20(Max) |
| Typical Gate Charge @ Vgs (nC) | 20(Max)10V |
| Typical Input Capacitance @ Vds (pF) | 340 25V |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 7.3 |
| Typical Turn-On Delay Time (ns) | 8.8 |
| Current - Continuous Drain (Id) @ 25В°C | 3.6A(Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Digi-ReelВ® |
| Power Dissipation (Max) | 2.5W(Ta), 42W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| Series | - |
| Supplier Device Package | D-Pak |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Вес, г | 0.66 |
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