N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF

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Номенклатурный номер: 8009755511

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Транзистор N-МОП, полевой, logic level, 100В 1,3A 1,3Вт DIP4 Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Resistance	270 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-10 V, +10 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	1.3 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	HVMDIP
Pin Count	4
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	12 nC @ 5 V
Width	6.29mm
Base Product Number	IRLD120 ->
Current - Continuous Drain (Id) @ 25В°C	1.3A (Ta)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	4-DIP (0.300"", 7.62mm)
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 5V
RoHS Status	ROHS3 Compliant
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±10V
Vgs(th) (Max) @ Id	2V @ 250ВµA
Вес, г	2