N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 1.3 Ω |
| Maximum Drain Source Voltage | 1000 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 400 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Series | Linear |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 155 nC @ 20 V |
| Width | 5.3mm |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXTH12N100L MOSFET
pdf, 85 КБ
