Diodes Inc MMST3906-7-F PNP Transistor, -200 mA, -40 V, 3-Pin SOT-323
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58 ֏
Кратность заказа 50 шт.
50 шт.
на сумму 2 900 ֏
Описание
Semiconductors\Discrete Semiconductors\Bipolar Transistors
Технические параметры
Maximum Collector Base Voltage | -40 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum DC Collector Current | 200 mA |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-323(SC-70) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | PNP |
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -40 V |
Collector- Emitter Voltage VCEO Max | -40 V |
Collector-Emitter Saturation Voltage | -0.3 V |
Configuration | Single |
Continuous Collector Current | -0.2 A |
DC Current Gain HFE Max | 300 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 300 MHz |
Manufacturer | Diodes Incorporated |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-323-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 200 mW |
Product Category | Bipolar Transistors-BJT |
Product Type | BJTs-Bipolar Transistors |
Series | MMST39 |
Subcategory | Transistors |
Transistor Polarity | PNP |
Collector Current (Ic) | 200mA |
Collector-Emitter Breakdown Voltage (Vceo) | 40V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@5mA, 50mA |
DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
Power Dissipation (Pd) | 200mW |
Transition Frequency (fT) | 300MHz |
Вес, г | 8 |