Diodes Inc ZXTP2012ZTA PNP Transistor, -4.3 A, -60 V, 3-Pin SOT-89

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580 ֏

Кратность заказа 5 шт.

5 шт. на сумму 2 900 ֏

Номенклатурный номер: 8009784712

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Bipolar Transistors

Описание Транзистор PNP, биполярный, 60В, 4,3А, 1,5Вт, SOT89 Характеристики

Maximum Collector Base Voltage	-100 V
Maximum Collector Emitter Voltage	-60 V
Maximum DC Collector Current	-4.3 A
Maximum Emitter Base Voltage	-7 V
Maximum Operating Frequency	120 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.1 W
Minimum DC Current Gain	100
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-89
Pin Count	3
Transistor Configuration	Single
Transistor Type	PNP
Collector-Emitter Breakdown Voltage	60V
Pd - Power Dissipation	1.5W
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	160 mV
Configuration:	Single
Continuous Collector Current:	-4.3 A
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	120 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	4.3 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	2.1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTP2012
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	3