Diodes Inc ZXTN2010ZTA NPN Transistor, 5 A, 60 V, 3-Pin SOT-89

Фото 1/5 Diodes Inc ZXTN2010ZTA NPN Transistor, 5 A, 60 V, 3-Pin SOT-89
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см. техническую документацию
660 ֏
Кратность заказа 10 шт.
10 шт. на сумму 6 600 ֏
Номенклатурный номер: 8009798732
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Bipolar Transistors
Биполярный транзистор NPN 60В 5A SOT89

Технические параметры

Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Frequency 130 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 2.1 W
Minimum DC Current Gain 100
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-89
Pin Count 3
Transistor Configuration Single
Transistor Type NPN
Collector-Emitter Breakdown Voltage 60V
Pd - Power Dissipation 2.1W
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 150 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 230 mV
Configuration: Single
Continuous Collector Current: 5 A
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 1000
Gain Bandwidth Product fT: 130 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-89-3
Pd - Power Dissipation: 2.1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZXTN2010
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 5

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 412 КБ
Datasheet
pdf, 139 КБ
Datasheet ZXTN2010ZTA
pdf, 196 КБ
Datasheet ZXTN2010ZTA
pdf, 196 КБ