Diodes Inc ZXTN25012EFLTA NPN Transistor, 2 A, 12 V, 3-Pin SOT-23

Фото 1/5 Diodes Inc ZXTN25012EFLTA NPN Transistor, 2 A, 12 V, 3-Pin SOT-23
Изображения служат только для ознакомления,
см. техническую документацию
620 ֏
Кратность заказа 25 шт.
25 шт. на сумму 15 500 ֏
Номенклатурный номер: 8009806218
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Bipolar Transistors
Описание 50nA 12V 350mW 55@15A,2V 2A 260MHz 230mV@5A,100mA NPN -55°C~+150°C@(Tj) SOT-23 BIpolar TransIstors - BJT

Технические параметры

Maximum Collector Base Voltage 20 V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 350 mW
Minimum DC Current Gain 500
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Type NPN
Automotive No
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Base Emitter Saturation Voltage (V) 0.95 40mA 2A
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 12
Maximum DC Collector Current (A) 2
Maximum Emitter Base Voltage (V) 7
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 350
Maximum Transition Frequency (MHz) 260(Typ)
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Packaging Tape and Reel
Part Status Active
PCB changed 3
PPAP No
Product Category Bipolar Small Signal
Standard Package Name SOT-23
Supplier Package SOT-23
Type NPN
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 20 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 235 mV
Configuration: Single
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 260 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 350 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZXTN250
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 10

Техническая документация

Datasheet
pdf, 482 КБ
Datasheet
pdf, 1680 КБ
Datasheet ZXTN25012EFLTA
pdf, 470 КБ