N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC SIHG25N40D-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-канал 400V 25A (Tc) 278W (Tc) сквозное отверстие TO-247AC
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Resistance | 170 mΩ |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 278 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247AC |
| Pin Count | 3 |
| Series | D Series |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 44.4 nC @ 10 V |
| Width | 5.31mm |
| Base Product Number | SIHG25 -> |
| Current - Continuous Drain (Id) @ 25В°C | 25A (Tc) |
| Drain to Source Voltage (Vdss) | 400V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1707pF @ 100V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 278W (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 13A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Вес, г | 3 |
