N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK 1212-8 SIS892ADN-T1-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
ThunderFET® Power MOSFETs Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Resistance | 47 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 52 W |
| Minimum Gate Threshold Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK 1212-8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 12.8 nC @ 10 V |
| Width | 3.4mm |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 19 S |
| Id - Continuous Drain Current: | 28 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerPAK-1212-8 |
| Part # Aliases: | SIS892ADN-GE3 |
| Pd - Power Dissipation: | 52 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19.5 nC |
| Rds On - Drain-Source Resistance: | 27 mOhms |
| Rise Time: | 13 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 16 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 75 КБ
Datasheet SIS892ADN-T1-GE3
pdf, 519 КБ
Трёхмерное изображение изделия
zip, 60 КБ
