STGW80V60DF IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

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536 шт., срок 8 недель

6 700 ֏

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Номенклатурный номер: 8009813889

Semiconductors\Discrete Semiconductors\IGBTs

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.

Channel Type	N
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	120 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	469 W
Minimum Operating Temperature	-40 °C
Mounting Type	Through Hole
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.85 V
Configuration:	Single
Continuous Collector Current at 25 C:	120 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	469 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGW80V60DF
Subcategory:	IGBTs
Technology:	Si
Collector Current (DC)	120(A)
Collector-Emitter Voltage	600(V)
Configuration	Single
Gate to Emitter Voltage (Max)	'±20(V)
Mounting	Through Hole
Operating Temperature (Max)	175C
Operating Temperature (Min)	-40C
Operating Temperature Classification	Automotive
Packaging	Rail/Tube
Rad Hardened	No
Вес, г	3