N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор: N-MOSFET, полевой, 1кВ, 10А, 400Вт, ISOPLUS247™ Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Resistance | 1.2 Ω |
| Maximum Drain Source Voltage | 1000 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 400 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | ISOPLUS247 |
| Pin Count | 3 |
| Series | HiperFET, Q3-Class |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V |
| Width | 5.21mm |
| Case | ISOPLUS247™ |
| Drain current | 10A |
| Drain-source voltage | 1kV |
| Gate charge | 64nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 1.2Ω |
| Polarisation | unipolar |
| Power dissipation | 400W |
| Type of transistor | N-MOSFET |
| Вес, г | 5 |
