N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 70 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.3 kW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | PLUS247 |
| Pin Count | 3 |
| Series | HiperFET, Polar3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 190 nC @ 10 V |
| Width | 5.21mm |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXFK80N60P3
pdf, 124 КБ
