N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK IRFU1N60APBF
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
МОП-транзистор N-Chan 600V 1.4 Amp
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.4 A |
| Maximum Drain Source Resistance | 7 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 36 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | IPAK(TO-251) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Width | 2.39mm |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.80 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 1.4 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 25 |
| Maximum Drain Source Resistance (mOhm) | 7000@10V |
| Typical Gate Charge @ Vgs (nC) | 14(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 14(Max) |
| Typical Input Capacitance @ Vds (pF) | 229@25V |
| Maximum Power Dissipation (mW) | 36000 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 9.8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Supplier Package | IPAK |
| Standard Package Name | TO-251 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 6.22(Max) |
| Package Length | 6.73(Max) |
| Package Width | 2.38(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Категория продукта | МОП-транзистор |
| Подкатегория | MOSFETs |
| Размер фабричной упаковки | 3000 |
| Серия | IRFR/U |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Упаковка | Tube |
| Вес, г | 3 |
