ZTX757STZ

ZTX757STZ
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см. техническую документацию
2 340 ֏
от 2 шт.1 850 ֏
от 3 шт.1 610 ֏
1 шт. на сумму 2 340 ֏
Номенклатурный номер: 8009860569
Бренд: DIODES INC.

Описание

Электроэлемент
Trans GP BJT PNP 300V 0.5A Automotive 3-Pin E-Line Box

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO -300 V
Collector- Emitter Voltage VCEO Max -300 V
Configuration Single
Continuous Collector Current -0.5 A
DC Collector/Base Gain hfe Min 50 at 100 mA at 5 V, 40 at 10 mA at 5 V
DC Current Gain hFE Max 50 at 100 mA at 5 V
Emitter- Base Voltage VEBO -5 V
Factory Pack Quantity 2000
Gain Bandwidth Product fT 30 MHz
Height 4.01 mm
Length 4.77 mm
Manufacturer Diodes Incorporated
Maximum DC Collector Current 0.5 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style Through Hole
Package / Case TO-92-3
Packaging Bulk
Pd - Power Dissipation 1 W
Product Category Bipolar Transistors-BJT
RoHS Details
Series ZTX757
Transistor Polarity PNP
Width 2.41 mm
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 300 V
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Single
Continuous Collector Current: -500 mA
DC Collector/Base Gain hfe Min: 50 at 100 mA, 5 V, 40 at 10 mA, 5 V
DC Current Gain hFE Max: 50 at 100 mA, 5 V
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 2000
Gain Bandwidth Product fT: 30 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: +200 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-92-3
Packaging: Ammo Pack
Pd - Power Dissipation: 1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZTX757
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Вес, г 0.4536

Техническая документация

Datasheet ZTX757
pdf, 54 КБ
Документация
pdf, 77 КБ