Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 SI1967DH-T1-GE3
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540 ֏
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Технические параметры
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current | 1.1 A |
Maximum Drain Source Resistance | 790 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -8 V, +8 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.25 W |
Minimum Gate Threshold Voltage | 0.4V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SOT-363 |
Pin Count | 6 |
Transistor Configuration | Isolated |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 2.6 nC @ 8 V |
Width | 1.35mm |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 10 ns |
Id - Continuous Drain Current: | 1.3 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOT-363-6 |
Part # Aliases: | SI1967DH-T1-BE3 SI1903DL-T1-GE3 |
Pd - Power Dissipation: | 1.25 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 4 nC |
Rds On - Drain-Source Resistance: | 490 mOhms |
Rise Time: | 27 ns |
Series: | SI1 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 2 P-Channel |
Typical Turn-Off Delay Time: | 15 ns |
Typical Turn-On Delay Time: | 12 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Вес, г | 18 |