LM2510AMR/NOPB, IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
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Описание
Semiconductors\Integrated circuits\Analog and mixed integrated circuits\MOSFET/IGBT drivers
Технические параметры
Case | SO8-EP |
Impulse rise time | 430ns |
Kind of integrated circuit | gate driver, high-/low-side |
Kind of package | tube |
Manufacturer | TEXAS INSTRUMENTS |
Mounting | SMD |
Number of channels | 2 |
Operating temperature | -40…125°C |
Output current | -3…3A |
ProtectionOCP - Over Current Protection OPP - Over Power Protection OVP - Unde | undervoltage UVP |
Pulse fall time | 260ns |
Topology | MOSFET half-bridge |
Type of integrated circuit | driver |
Voltage class | 80V |
Вес, г | 0.08 |