Diodes Inc FMMT555TA PNP Transistor, -1 A, -150 V, 3-Pin SOT-23
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см. техническую документацию
см. техническую документацию
163 ֏
Кратность заказа 50 шт.
50 шт.
на сумму 8 150 ֏
Описание
Semiconductors\Discrete Semiconductors\Bipolar Transistors
Технические параметры
| Maximum Collector Base Voltage | -160 V |
| Maximum Collector Emitter Voltage | -150 V |
| Maximum DC Collector Current | -1 A |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 500 mW |
| Minimum DC Current Gain | 50 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 160 V |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| Continuous Collector Current: | -1 A |
| DC Collector/Base Gain hfe Min: | 50 at 10 mA, 10 V, 50 at 300 mA, 10 V |
| DC Current Gain hFE Max: | 50 at 10 mA, 10 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FMMT55 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 1A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 150V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA, 100mA |
| DC Current Gain (hFE@Ic,Vce) | 50@300mA, 10V |
| Power Dissipation (Pd) | 500mW |
| Transition Frequency (fT) | 100MHz |
| Вес, г | 10 |
