N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXFA22N65X2
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Resistance | 145 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 390 W |
| Minimum Gate Threshold Voltage | 2.7V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | HiperFET, X2-Class |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Width | 11.05mm |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 8 S |
| Id - Continuous Drain Current: | 22 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 360 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 35 ns |
| Series: | 650V Ultra Junction X2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 38 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXFA22N65X2
pdf, 168 КБ
