N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXFN80N50P
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 66 A |
Maximum Drain Source Resistance | 65 mΩ |
Maximum Drain Source Voltage | 500 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 700 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Screw Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-227 |
Pin Count | 4 |
Series | HiperFET, Polar |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 195 nC @ 10 V |
Width | 25.07mm |
Brand: | IXYS |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Fall Time: | 18 ns |
Id - Continuous Drain Current: | 66 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Screw Mounts |
Number of Channels: | 1 Channel |
Package / Case: | SOT-227-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 700 W |
Product Category: | Discrete Semiconductor Modules |
Product Type: | Discrete Semiconductor Modules |
Product: | Power MOSFET Modules |
Rds On - Drain-Source Resistance: | 65 mOhms |
Rise Time: | 27 ns |
Series: | HiPerFET |
Subcategory: | Discrete Semiconductor Modules |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Type: | HiperFET |
Typical Turn-Off Delay Time: | 70 ns |
Typical Turn-On Delay Time: | 25 ns |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Вес, г | 194 |