N-Channel MOSFET, 61 A, 500 V, 4-Pin SOT-227 IXFN64N50P
![Фото 1/2 N-Channel MOSFET, 61 A, 500 V, 4-Pin SOT-227 IXFN64N50P](https://static.chipdip.ru/lib/655/DOC024655165.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/250/DOC034250829.jpg)
45 400 ֏
Добавить в корзину 1 шт.
на сумму 45 400 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 61 A |
Maximum Drain Source Resistance | 85 mΩ |
Maximum Drain Source Voltage | 500 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 5.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 700 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Screw Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-227 |
Pin Count | 4 |
Series | HiperFET, Polar |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 150 nC @ 10 V |
Width | 25.42mm |
Вес, г | 194.6 |