Diodes Inc BST52TA NPN Darlington Transistor, 500 mA 80 V HFE:1000, 3-Pin SOT-89

Фото 1/2 Diodes Inc BST52TA NPN Darlington Transistor, 500 mA 80 V HFE:1000, 3-Pin SOT-89
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см. техническую документацию
220 ֏
Кратность заказа 25 шт.
25 шт. на сумму 5 500 ֏
Номенклатурный номер: 8010470330
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Darlington Pairs

Технические параметры

Maximum Base Emitter Saturation Voltage 1.9 V
Maximum Collector Base Voltage 90 V
Maximum Collector Emitter Saturation Voltage 1.3 V
Maximum Collector Emitter Voltage 80 V
Maximum Continuous Collector Current 500 mA
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 1 W
Minimum DC Current Gain 1000
Minimum Operating Temperature -65 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-89
Pin Count 3
Transistor Configuration Single
Transistor Type NPN
Width 2.6mm
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 90 V
Collector- Emitter Voltage VCEO Max: 80 V
Configuration: Single
Continuous Collector Current: 0.5 A
DC Collector/Base Gain hfe Min: 1000 at 150 mA at 10 V, 2000 at 500 mA at 10 V
DC Current Gain hFE Max: 1000
Emitter- Base Voltage VEBO: 10 V
Factory Pack Quantity: Factory Pack Quantity: 1000
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 0.5 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -65 C
Mounting Style: SMD/SMT
Package / Case: SOT-89
Pd - Power Dissipation: 1 W
Product Category: Darlington Transistors
Product Type: Darlington Transistors
Series: BST52
Subcategory: Transistors
Transistor Polarity: NPN
Вес, г 1

Техническая документация

Datasheet
pdf, 220 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 16 КБ